| PART |
Description |
Maker |
| BR93L46RF-W BR93L46RFJ-W BR93L46RFV-W BR93L46RFVJ- |
Microwire BUS 1Kbit(64 x 16bit) EEPROM
|
Rohm
|
| BR93H56RFJ-W BR93H56RF-W BR93H56-W |
Microwire Bus 2Kbit (128 x 16bit) EEPROM
|
ROHM[Rohm]
|
| BR93H76RFJ-W BR93H76RF-W BR93H76-W |
Microwire BUS 8Kbit (512 x 16bit) EEPROM
|
ROHM[Rohm]
|
| AKD4563A AK4563A AK4563AVF |
16bit 4AD/2DA APGA/ALC 3V
Low Power 16bit 4ch ADC & 2ch DAC with ALC
|
AKM
Asahi Kasei Microsystems
|
| BR24L64FJ-WE2 BR24L02FVM-WTR BR24L04NUX-WTR BR24L0 |
I2C BUS 64Kbit(8192x8bit) EEPROM
I2C BUS 2Kbit(256x8bit) EEPROM
I2C BUS 4Kbit(512x8bit) EEPROM
I2C BUS 1Kbit(128x8bit) EEPROM
I2C BUS 8Kbit(1024x8bit) EEPROM
I2C BUS 16Kbit(2048x8bit) EEPROM
I2C BUS 32Kbit(4096x8bit) EEPROM
|
ROHM
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| AK4564VQ AK4564 AKD4564 |
16bit Mic/Hp/Spk AMP & D-ALC/EQ
16BIT CODEC WITH BUILT-IN ALC AND MIC/HP/SPK-AMP
|
AKM
Asahi Kasei Microsystems
|
| TB62706 TB62706BF TB62706BN TB6206BN EE08018 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
